Interfacial thermal conductance between silicon and a vertical carbon nanotube
نویسندگان
چکیده
nanotube Ming Hu, Pawel Keblinski, Jian-Sheng Wang, and Nachiket Raravikar Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Center for Computational Science and Engineering and Department of Physics, National University of Singapore, Singapore 117542, Singapore Intel Corporation, 5000 W. Chandler Blvd., Chandler, Arizona 85226, USA
منابع مشابه
Molecular dynamics simulations of carbon nanotube/silicon interfacial thermal conductance.
Using molecular dynamics simulations with Tersoff reactive many-body potential for Si-Si, Si-C, and C-C interactions, we have calculated the thermal conductance at the interfaces between carbon nanotube (CNT) and silicon at different applied pressures. The interfaces are formed by axially compressing and indenting capped or uncapped CNTs against 2 x 1 reconstructed Si surfaces. The results show...
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